{"title":"Fabrication of a microwave MEMS switch","authors":"M. Denhoff, P. Grant, M. Harry, M. Yu","doi":"10.1109/ANTEM.2000.7851661","DOIUrl":null,"url":null,"abstract":"We are developing a fabrication process for a microelectro-mechanical system (MEMS) microwave switch. Our aim is to make a switch that operates from dc to 40 GHz with low insertion loss and high isolation. The, electrostatically activated, switch is based on a coplanar waveguide design with a cantilever or bridge mounted contact to open and close the switch. The fabrication process is not reliable yet, but we have made a working switch with an on state insertion loss less than 0.3 dB and an off state isolation of 45 dB at 4 GHz. Material properties and mechanical design are important in the operation of the switch.","PeriodicalId":416991,"journal":{"name":"Symposium on Antenna Technology and Applied Electromagnetics [ANTEM 2000]","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Symposium on Antenna Technology and Applied Electromagnetics [ANTEM 2000]","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ANTEM.2000.7851661","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
We are developing a fabrication process for a microelectro-mechanical system (MEMS) microwave switch. Our aim is to make a switch that operates from dc to 40 GHz with low insertion loss and high isolation. The, electrostatically activated, switch is based on a coplanar waveguide design with a cantilever or bridge mounted contact to open and close the switch. The fabrication process is not reliable yet, but we have made a working switch with an on state insertion loss less than 0.3 dB and an off state isolation of 45 dB at 4 GHz. Material properties and mechanical design are important in the operation of the switch.