Thermal-aware TSV repair for electromigration in 3D ICs

Shengcheng Wang, M. Tahoori, K. Chakrabarty
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引用次数: 7

Abstract

Electromigration (EM) occurrence on through-silicon-vias (TSVs) is a major reliability concern for Three-Dimensional Integrated-Circuits (3D ICs), and EM can severely reduce the mean-time-to-failure (MTTF). In this work, a novel fault tolerant technique is proposed to increase the MTTF of the functional TSV network through the assignment of spare TSVs to EM-vulnerable functional TSVs. The objective is to meet the target MTTF with minimum spare TSVs and minimal impact on the circuit timing. By considering the impact of temperature variation, the proposed technique provides a more robust repair solution for EM-induced TSV defects with minimum delay overhead, compared to previous thermal-unaware methods.
三维集成电路中电迁移的热感知TSV修复
硅通孔(tsv)上的电迁移(EM)是三维集成电路(3D ic)可靠性的主要问题,EM可以大大缩短平均故障时间(MTTF)。本文提出了一种新的容错技术,通过将备用TSV分配给易受电磁攻击的功能TSV来提高功能TSV网络的MTTF。目标是以最小的备用tsv和对电路时序的最小影响来满足目标MTTF。考虑到温度变化的影响,与之前的热不敏感方法相比,该技术为em诱导的TSV缺陷提供了更强大的修复方案,且延迟开销最小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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