A new programming technique for flash memory devices

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) Pub Date : 1999-06-08 DOI:10.1109/VTSA.1999.786033

Z. Liu, Tengyu Ma

引用次数: 2

Abstract

A new programming scheme for flash memory devices, designated pulse agitated substrate hot electron injection (PASHEI), is demonstrated, which can be readily implemented with current cell structures without modification. Detailed comparison between CHEI and PASHEI is reported. Using this technique, excellent endurance characteristics are obtained up to 100 k cycles.

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一种新的闪存设备编程技术

提出了一种新的闪存器件编程方案，即脉冲搅拌衬底热电子注入(PASHEI)，该方案可以在现有的电池结构下轻松实现，而无需修改。报告了CHEI和PASHEI的详细比较。使用这种技术，可获得高达100 k循环的优异续航特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)

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