Optical Characterization of InAlGaAs on InP for Monochromatic Photonic Power Conversion

2019 Photonics North (PN) Pub Date : 2019-05-01 DOI:10.1109/PN.2019.8819522

M. Beattie, M. Wilkins, M. C. Tam, C. Valdivia, Z. Wasilewski

引用次数: 1

Abstract

Development of a photonic power converter for operation at 1310 nm would enable long distance optical power transfer over fiber. InAlGaAs lattice-matched to InP may be used as the absorber material in such a device. Material properties of InAlGaAs grown by molecular beam epitaxy (MBE) are studied by techniques including electro- and photoluminescence, spectroscopic ellipsometry, and quantum efficiency.

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单色光子功率转换中InP上InAlGaAs的光学特性

在1310nm工作的光子功率转换器的开发将使光纤上的长距离光功率传输成为可能。与InP匹配的InAlGaAs晶格可以用作该器件的吸收材料。采用电致发光、光致发光、椭偏光谱和量子效率等技术研究了分子束外延生长的铟铝砷化镓材料的性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2019 Photonics North (PN)

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