Simple Reference Voltage Generation Circuit Insensitive to Temperature

Abstract

This paper describes a reference voltage generation circuit insensitive to temperature, based on the MOSFET drain current temperature characteristics. The proposed circuit uses series connection of diode connected MOSFETs. As the temperature rises, the gate-source voltage of the diode connected MOSFET increases for large current per unit channel width whereas it decreases for small current. Hence when both MOSFETs are connected in series, their gate-source voltages are added, which can have small temperature coefficient. Based on this principle, a reference voltage insensitive to temperature can be generated.