Modelling and analysis of scaled MOSFET devices and circuit simulation

Abstract

A new approach of extremely scaled MOSFET device based on modified BSIM4v6 is presented for modelling and analysis. The model ensures the continuities of current-voltage, conductance and transconductance through all voltage bias conditions. The improved model has been enhanced by device parameters and dimensions to accounts for all use in various device technologies with less extracted parameters. The accurate model has been implemented in the circuit simulation such as Ring-oscillators and CMOS circuits using HSPICE, SMART Spice and higher level SPICE, comparison with other simulation techniques showed a compromise between computation time and more complex model equations, accuracy is the major factor of simulation results and device performance.