Microscopic simulation of electron transport and self-heating effects in InAs Nanowire MISFETs

Abstract

We use a newly developed three-dimensional electrothermal Monte Carlo simulator, using finite-element meshing, to study metal-insulator field-effect transistors (MISFETs) based on a single InAs Nanowire. The model involves the coupling of an ensemble Monte Carlo simulation with the solution of the heat diffusion equation, and is carefully calibrated with data from experimental work on these devices. The simulator is applied to investigate electron transport and demonstrate the importance of self-heating in such devices characterized by high current densities.