15 GHz medium power amplifier design based On 0.15 μm p-HEMT GaAs technology for wideband applications

Abstract

This paper presents a thorough design of 15 GHz Ku-Band medium Power Amplifier (MPA). The technology used for this design is 0.15 μm GaAs p-HEMT technology from WIN semiconductor. The type of active device selected for this design is from the depletion mode p-HEMT. The device consumes 4.5 V of voltage supply and -0.2 V of DC bias. At operating frequency of 15 GHz, the circuit is design to have optimum power with 50 Ω impedance matching for both input and output network, high input and output return loss, high small signal gain, linear output power and high power aided efficiency (PAE).