{"title":"A 71–86 GHz bidirectional image selection transceiver architecture","authors":"Najme Ebrahimi, J. Buckwalter","doi":"10.1109/RFIC.2017.7969098","DOIUrl":null,"url":null,"abstract":"A bidirectional image selection transceiver is presented that operates over 71–76 GHz and 81–86 GHz with only 3 GHz of LO tuning range. A sliding-IF architecture with bidirectional VGAs allows operation in transmit and receive modes. The sliding IF and narrow LO tuning range allow wideband image rejection using a single stage polyphase filter. The circuit is implemented in a 90-nm SiGe BiCMOS process. Measurements indicate conversion gain of −2.5 dB to 3 dB with less than ±0.75 dB variation over 10 GHz in TX mode and −4dB to 0 dB with less than ±1 dB variation over 10 GHz bandwidth in RX mode. With 16- and 64-QAM, the EVM is below 5% and 4% at data rates of 6 Gb/s and 9 Gb/s. The RF and LO circuitry consumes at most 150 mW and 250 mW.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2017.7969098","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A bidirectional image selection transceiver is presented that operates over 71–76 GHz and 81–86 GHz with only 3 GHz of LO tuning range. A sliding-IF architecture with bidirectional VGAs allows operation in transmit and receive modes. The sliding IF and narrow LO tuning range allow wideband image rejection using a single stage polyphase filter. The circuit is implemented in a 90-nm SiGe BiCMOS process. Measurements indicate conversion gain of −2.5 dB to 3 dB with less than ±0.75 dB variation over 10 GHz in TX mode and −4dB to 0 dB with less than ±1 dB variation over 10 GHz bandwidth in RX mode. With 16- and 64-QAM, the EVM is below 5% and 4% at data rates of 6 Gb/s and 9 Gb/s. The RF and LO circuitry consumes at most 150 mW and 250 mW.