{"title":"Modeling and simulation of an instrumentation amplifier in high temperature using a VHDL-AMS op-amp model","authors":"S. Baccar, T. Levi, D. Dallet, F. Barbara","doi":"10.1109/NEWCAS.2014.6933973","DOIUrl":null,"url":null,"abstract":"In this paper, an “architectural” description of an instrumentation amplifier (in-amp) is used to simulate its common mode rejection ratio (CMRR) and voltage offset (VOS) in high temperature (HT). The simulations are achieved by using two different models of an industrial op-amp: the familiar SPICE macro-model and a customized VHDL-AMS model. By simulating these two parameters in HT, we evaluate in this work dependency between the op-amp model and the in-amp model. This dependency is described first by reviewing theoretical equations. We compare finally the VHDL-AMS simulation accuracy to the SPICE simulation accuracy in HT.","PeriodicalId":216848,"journal":{"name":"2014 IEEE 12th International New Circuits and Systems Conference (NEWCAS)","volume":"77 11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE 12th International New Circuits and Systems Conference (NEWCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEWCAS.2014.6933973","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In this paper, an “architectural” description of an instrumentation amplifier (in-amp) is used to simulate its common mode rejection ratio (CMRR) and voltage offset (VOS) in high temperature (HT). The simulations are achieved by using two different models of an industrial op-amp: the familiar SPICE macro-model and a customized VHDL-AMS model. By simulating these two parameters in HT, we evaluate in this work dependency between the op-amp model and the in-amp model. This dependency is described first by reviewing theoretical equations. We compare finally the VHDL-AMS simulation accuracy to the SPICE simulation accuracy in HT.