A Floating Gate MOSFET Based Current Reference with Subtraction Technique

V. Babu, P. Haseena, M. Baiju
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引用次数: 7

Abstract

In this paper we propose a scheme for generating a reference current which can be implemented in the CMOS technology. The system performance is investigated for a range of supply voltages and temperature. The dependency of CMOS Current reference on supply voltage and temperature is compensated by simply subtracting two current outputs with the same dependencies on the supply voltage and temperature. The system performance is improved by the use of Floating Gate MOSFET. The work includes the mathematical modeling of the proposed current reference circuit and its verification by simulation using TANNAR EDA tools. The layout of the proposed circuit is also prepared. The circuit performance over temperature and supply voltage is better than the prior works in this area. The current reference shows the supply and temperature dependencies of 520 ppm/V and 312 ppm/oC, respectively. The current reference can operate down to 0.9V supply.
基于浮栅MOSFET的电流基准减法技术
本文提出了一种可以在CMOS技术中实现的产生参考电流的方案。研究了系统在一定电压和温度范围内的性能。CMOS电流参考值对电源电压和温度的依赖性通过简单地减去两个对电源电压和温度具有相同依赖性的电流输出来补偿。采用浮栅MOSFET提高了系统的性能。工作包括提出的电流参考电路的数学建模,并使用TANNAR EDA工具进行仿真验证。并给出了所设计电路的版图图。该电路在温度和电源电压下的性能优于前人的研究成果。电流参考分别显示520 ppm/V和312 ppm/oC的电源和温度依赖关系。参考电流可以运行到0.9V电源。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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