Non-volatile FPGAs based on spintronic devices

O. Goncalves, G. Prenat, G. D. Pendina, B. Dieny
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引用次数: 17

Abstract

This paper presents an innovative architecture for radiation-hardened FPGA (Field Programmable Gate Array). This architecture is based on the use of MTJs (Magnetic Tunnel Junctions), magnetic nanostructures used as basic elements of MRAM (Magnetic Random Access Memory). These devices are totally immune to radiations and can be used as a reference memory to perform “scrubbing” techniques, which consist in regularly reloading the configuration of the FPGA to fix the radiation induced errors that may have occured. This approach allows hardening the circuits at low cost in terms of area, while reducing the standby power consumption and offering new functionalities, like dynamic reconfiguration. A silicon demonstrator was implemented, including a 2-inputs LUT (Look Up Table) and tested using a digital tester, giving encouraging results.
基于自旋电子器件的非易失性fpga
本文提出了一种创新的抗辐射FPGA(现场可编程门阵列)结构。这种架构是基于MTJs(磁性隧道结)的使用,磁性纳米结构用作MRAM(磁性随机存取存储器)的基本元素。这些器件完全不受辐射的影响,可以用作执行“擦洗”技术的参考存储器,其中包括定期重新加载FPGA的配置,以修复可能发生的辐射引起的错误。这种方法可以在低成本的情况下硬化电路,同时降低待机功耗,并提供新的功能,如动态重新配置。实现了一个硅演示器,包括一个2输入LUT(查找表),并使用数字测试仪进行了测试,给出了令人鼓舞的结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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