{"title":"A low-distortion switched-source-follower track-and-hold circuit","authors":"Akinori Moriyama, S. Taniyama, T. Waho","doi":"10.1109/ICECS.2012.6463788","DOIUrl":null,"url":null,"abstract":"A novel switched-source-follower track-and-hold (T/H) circuit has been proposed, where an input source-coupled pair conventionally used preceding the source-follower switch is replaced with another source-follower stage. Suppressing signal-dependent sample-timing jitter, which is due to the channel-length modulation of the input transistor, leads to a low-distortion T/H operation. Circuit simulation assuming a 0.1-μm InP-based HEMT technology has revealed an SFDR improvement from 58dB to 70dB for input and sampling frequencies of 3 GHz and 20 GHz, respectively. Although the present result is based on the high-speed compound semiconductor technology, the idea behind this can be applied to T/H circuits using nano-scale MOSFETs with reduced output impedance.","PeriodicalId":269365,"journal":{"name":"2012 19th IEEE International Conference on Electronics, Circuits, and Systems (ICECS 2012)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 19th IEEE International Conference on Electronics, Circuits, and Systems (ICECS 2012)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2012.6463788","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A novel switched-source-follower track-and-hold (T/H) circuit has been proposed, where an input source-coupled pair conventionally used preceding the source-follower switch is replaced with another source-follower stage. Suppressing signal-dependent sample-timing jitter, which is due to the channel-length modulation of the input transistor, leads to a low-distortion T/H operation. Circuit simulation assuming a 0.1-μm InP-based HEMT technology has revealed an SFDR improvement from 58dB to 70dB for input and sampling frequencies of 3 GHz and 20 GHz, respectively. Although the present result is based on the high-speed compound semiconductor technology, the idea behind this can be applied to T/H circuits using nano-scale MOSFETs with reduced output impedance.