Tae Yun Kim, F. Kimura, Y. Matsui, T. Yoshihara, T. Ooishi, Y. Kihara, M. Hatanaka
{"title":"A 75MHz MRAM with Pipe-Lined Self-Reference Read Scheme for Mobile/Robotics Memory System","authors":"Tae Yun Kim, F. Kimura, Y. Matsui, T. Yoshihara, T. Ooishi, Y. Kihara, M. Hatanaka","doi":"10.1109/ASSCC.2005.251679","DOIUrl":null,"url":null,"abstract":"In this paper, we propose a pipe-lined self-reference read scheme of MRAM with read modify write which can make an operation period short. It also brings continuous read out accompanied with a mixed mat architecture. A new self-reference sense amplifier supported by a voltage transferred circuit has a wide margin. It is able to tolerate 50% MTJ resistance variation for sensing operation, and makes 75MHz operation at 1.2V Vcc possible. It brings a robust memory module for embedded memory system and suits mobile/robotics synchronous memory system","PeriodicalId":341932,"journal":{"name":"2005 IEEE Asian Solid-State Circuits Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2005.251679","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
In this paper, we propose a pipe-lined self-reference read scheme of MRAM with read modify write which can make an operation period short. It also brings continuous read out accompanied with a mixed mat architecture. A new self-reference sense amplifier supported by a voltage transferred circuit has a wide margin. It is able to tolerate 50% MTJ resistance variation for sensing operation, and makes 75MHz operation at 1.2V Vcc possible. It brings a robust memory module for embedded memory system and suits mobile/robotics synchronous memory system