A 75MHz MRAM with Pipe-Lined Self-Reference Read Scheme for Mobile/Robotics Memory System

Tae Yun Kim, F. Kimura, Y. Matsui, T. Yoshihara, T. Ooishi, Y. Kihara, M. Hatanaka
{"title":"A 75MHz MRAM with Pipe-Lined Self-Reference Read Scheme for Mobile/Robotics Memory System","authors":"Tae Yun Kim, F. Kimura, Y. Matsui, T. Yoshihara, T. Ooishi, Y. Kihara, M. Hatanaka","doi":"10.1109/ASSCC.2005.251679","DOIUrl":null,"url":null,"abstract":"In this paper, we propose a pipe-lined self-reference read scheme of MRAM with read modify write which can make an operation period short. It also brings continuous read out accompanied with a mixed mat architecture. A new self-reference sense amplifier supported by a voltage transferred circuit has a wide margin. It is able to tolerate 50% MTJ resistance variation for sensing operation, and makes 75MHz operation at 1.2V Vcc possible. It brings a robust memory module for embedded memory system and suits mobile/robotics synchronous memory system","PeriodicalId":341932,"journal":{"name":"2005 IEEE Asian Solid-State Circuits Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2005.251679","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

In this paper, we propose a pipe-lined self-reference read scheme of MRAM with read modify write which can make an operation period short. It also brings continuous read out accompanied with a mixed mat architecture. A new self-reference sense amplifier supported by a voltage transferred circuit has a wide margin. It is able to tolerate 50% MTJ resistance variation for sensing operation, and makes 75MHz operation at 1.2V Vcc possible. It brings a robust memory module for embedded memory system and suits mobile/robotics synchronous memory system
一种用于移动/机器人存储系统的带管道自参考读取方案的75MHz MRAM
本文提出了一种具有读修改写功能的流水线式MRAM自引用读方案,该方案可以缩短操作周期。它还带来了连续的阅读伴随着混合的垫子结构。一种由电压转移电路支持的新型自参考感测放大器具有宽余量。它能够容忍50%的MTJ电阻变化进行传感操作,并使1.2V Vcc下的75MHz操作成为可能。它为嵌入式存储系统提供了一个健壮的存储模块,适用于移动/机器人同步存储系统
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信
小红书