A Surface Potential Based Compact Model for β-Ga2O3 Power MOSFETs

Abstract

For the first time, an analytical surface-potential-based drain current model is developed for beta-phase gallium oxide (β-Ga2O3) power metal-oxide-semiconductor field-effect transistors (MOSFETs). The surface potential solution is deduced by solving Poisson’s equation with appropriate simplification assumptions in accumulation, partial-depletion, and full-depletion mode. Then, the drain current expression is derived from Pao-Sah’s dual integral. The validity of the model is verified by comparing the results of the model with numerical simulations carried out with the technology computer-aided design (TCAD) tool. A good agreement between the proposed model and TCAD simulations is observed.