A Surface Potential Based Compact Model for β-Ga2O3 Power MOSFETs

Kai Zhou, Xuanze Zhou, Songming Miao, Qiming He, Weibing Hao, Jiahong Du, Guangwei Xu, Shibing Long
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Abstract

For the first time, an analytical surface-potential-based drain current model is developed for beta-phase gallium oxide (β-Ga2O3) power metal-oxide-semiconductor field-effect transistors (MOSFETs). The surface potential solution is deduced by solving Poisson’s equation with appropriate simplification assumptions in accumulation, partial-depletion, and full-depletion mode. Then, the drain current expression is derived from Pao-Sah’s dual integral. The validity of the model is verified by comparing the results of the model with numerical simulations carried out with the technology computer-aided design (TCAD) tool. A good agreement between the proposed model and TCAD simulations is observed.
基于表面电位的β-Ga2O3功率mosfet紧凑模型
本文首次建立了β相氧化镓(β-Ga2O3)功率金属氧化物半导体场效应晶体管(mosfet)的分析表面电势漏极电流模型。在积累、部分耗尽和完全耗尽三种模式下,通过求解泊松方程,推导出表面电位解。然后,利用Pao-Sah的对偶积分推导出漏极电流表达式。通过将模型结果与计算机辅助设计(TCAD)工具进行的数值模拟结果进行比较,验证了模型的有效性。所提出的模型与TCAD模拟结果吻合较好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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