Kai Zhou, Xuanze Zhou, Songming Miao, Qiming He, Weibing Hao, Jiahong Du, Guangwei Xu, Shibing Long
{"title":"A Surface Potential Based Compact Model for β-Ga2O3 Power MOSFETs","authors":"Kai Zhou, Xuanze Zhou, Songming Miao, Qiming He, Weibing Hao, Jiahong Du, Guangwei Xu, Shibing Long","doi":"10.1109/SSLChinaIFWS57942.2023.10070932","DOIUrl":null,"url":null,"abstract":"For the first time, an analytical surface-potential-based drain current model is developed for beta-phase gallium oxide (β-Ga2O3) power metal-oxide-semiconductor field-effect transistors (MOSFETs). The surface potential solution is deduced by solving Poisson’s equation with appropriate simplification assumptions in accumulation, partial-depletion, and full-depletion mode. Then, the drain current expression is derived from Pao-Sah’s dual integral. The validity of the model is verified by comparing the results of the model with numerical simulations carried out with the technology computer-aided design (TCAD) tool. A good agreement between the proposed model and TCAD simulations is observed.","PeriodicalId":145298,"journal":{"name":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSLChinaIFWS57942.2023.10070932","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
For the first time, an analytical surface-potential-based drain current model is developed for beta-phase gallium oxide (β-Ga2O3) power metal-oxide-semiconductor field-effect transistors (MOSFETs). The surface potential solution is deduced by solving Poisson’s equation with appropriate simplification assumptions in accumulation, partial-depletion, and full-depletion mode. Then, the drain current expression is derived from Pao-Sah’s dual integral. The validity of the model is verified by comparing the results of the model with numerical simulations carried out with the technology computer-aided design (TCAD) tool. A good agreement between the proposed model and TCAD simulations is observed.