Effects of Au catalyst on GaAs (111)B surface during annealing

Z. Liao, H. Y. Xu, W. Sun, Y. Guo, L. Yang, Z. Chen, J. Zou, Z. Lu, P. P. Chen, W. Lu
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Abstract

To understand the growth mechanism and the effect of catalysts in growing III-V epitaxial nanowires, GaAs (111)B substrates with Au thin films were annealed in a molecular beam epitaxy (MBE) system. Scanning/transmission electron microscopy (SEM/TEM) investigations indicate that, during annealing, the Au catalysts were formed and affect significantly the surface morphology of the GaAs substrates.
Au催化剂对GaAs (111)B表面退火的影响
为了了解III-V型外延纳米线的生长机理和催化剂的作用,采用分子束外延(MBE)系统对带有Au薄膜的GaAs (111)B衬底进行了退火处理。扫描/透射电镜(SEM/TEM)研究表明,在退火过程中,Au催化剂形成并显著影响了GaAs衬底的表面形貌。
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