Nano-Function materials for TSV technologies

Hiroaki Ikeda, S. Sekine, Ryuji Kimura, Koichi Shimokawa, K. Okada, H. Shindo, T. Ooi, Rei Tamaki, Makoto Nagata
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引用次数: 2

Abstract

This paper discloses that Nano-Function materials make TSV structure by printing technologies without CVD/PVD/Plating. For isolation layer forming, two types of TSV pattern had been examined. For metal fill, we adopted conductive paste or alloy plate contains nanomized alloys (Cu, Sn and additives) to fill via by less than 250°C condition. Re-melting temperature of the alloy is more than 300°C.
TSV技术的纳米功能材料
本文揭示了纳米功能材料采用印刷技术制备TSV结构,而无需CVD/PVD/电镀。对于隔离层的形成,研究了两种类型的TSV模式。对于金属填充,我们采用含有纳米合金(Cu, Sn和添加剂)的导电浆料或合金板在低于250°C的条件下进行填充。合金的重熔温度在300℃以上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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