A 10 Gb/s BiCMOS clock and data recovering 1:4-demultiplexer in a standard plastic package with external VCO

J. Hauenschild, C. Dorschky, T. von Mohrenfels, R. Seitz
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引用次数: 12

Abstract

A test chip for a prototype transmission link performs the task of clock and data recovery together with demultiplexing from 10 to 2.5 Gb/s. The chip uses a BiCMOS process that features a set of devices for high-frequency mixed-signal designs; including 24 GHz NPNs, 0.7 /spl mu/m L/sub eff/ CMOS, 250 and 2000 /spl Omega//sq. polyresistors, 2 fF//spl mu/m/sup 2/ capacitors, Schottky diodes, and lateral PNPs. Early process samples with 16 GHz f/sub T/ are used in the evaluation. Improved performance is expected with the final process. The gates are designed for sufficient speed and nominal VEE of -3.3 V. Even though differential current mode logic (CML) with a differential voltage swing of less than 360 mV/sub pp/ is employed, a wiring capacitance of several 10 fF increases the power-delay product significantly. Wiring length is minimized by local biasing and omission of routing channels. The size of gates with two-level series gating (latch, and, xor) including emitter follower outputs is 67/spl times/58 /spl mu/m/sup 2/. The result of this local biasing scheme is a favourable positive temperature coefficient (TC) for the logic swing, partly compensating for the negative TC of the current switch gain at the cost of high sensitivity to supply variations. All transistors have 0.7 /spl mu/m minimum emitter length, the width avoids the high current region. The other logic gates are downscaled in case of 2.5 GHz operation, input emitter followers omitted in those latches driven from the external clocks.
一个10 Gb/s BiCMOS时钟和数据恢复1:4解复用器在一个标准的塑料包装与外部VCO
用于原型传输链路的测试芯片执行时钟和数据恢复以及从10到2.5 Gb/s的解复用任务。该芯片采用BiCMOS工艺,具有一组用于高频混合信号设计的器件;包括24 GHz npn, 0.7 /spl mu/m L/sub / CMOS, 250和2000 /spl Omega//sq。多电阻,2 fF//spl mu/m/sup 2/电容器,肖特基二极管和侧向pnp。在评估中使用了16ghz f/sub T/的早期工艺样品。改进的性能预期与最后的过程。门被设计为足够的速度和标称VEE -3.3 V。即使采用差分电压摆幅小于360 mV/sub / pp/的差分电流模式逻辑(CML),几个10 fF的布线电容也会显著增加功率延迟积。布线长度通过局部偏置和路由通道的省略最小化。具有两级串联门控(锁存器和xor)的门的大小包括发射器跟随器输出为67/spl倍/58 /spl mu/m/sup 2/。这种局部偏置方案的结果是对逻辑摆幅有利的正温度系数(TC),部分补偿了电流开关增益的负TC,代价是对电源变化的高灵敏度。所有晶体管的最小发射极长度为0.7 /spl mu/m,宽度避免了高电流区域。其他逻辑门在2.5 GHz工作的情况下被缩小,输入发射极跟随器在那些由外部时钟驱动的锁存器中被省略。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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