A High-Dynamic-Range W-Band Frequency-Conversion IC for Microwave Dual-Conversion Receivers

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI:10.1109/CSICS.2016.7751022

Seong-Kyun Kim, R. Maurer, M. Urteaga, M. Rodwell

引用次数: 5

Abstract

We present a high dynamic range W-band frequency conversion IC, incorporating a base-collector diode mixer and a 9:1 LO frequency multiplier, implemented in a 130 nm InP HBT technology. The IC was designed for a broadly tunable 1-22 GHz dual-conversion receiver using a 100 GHz first IF. In up-conversion, from 1-22 GHz to W-band, the IC has 7 dB conversion loss and 23 dB IIP3; in down-conversion, from W-band to 0.1-22 GHz, it has 8 dB conversion loss and 23 dBm IIP3. The IC tunes most of W-band (75-105 GHz) and consumes 2 W.

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微波双转换接收机用高动态范围w波段变频集成电路

我们提出了一种高动态范围w波段频率转换IC，结合了一个基极集电极二极管混频器和一个9:1 LO倍频器，采用130 nm InP HBT技术实现。该IC设计用于使用100 GHz第一中频的宽可调谐1-22 GHz双转换接收器。在上转换中，从1-22 GHz到w频段，IC的转换损耗为7 dB, IIP3为23 dB;下变频时，从w频段到0.1-22 GHz，转换损耗为8 dB, IIP3为23 dBm。IC调谐大部分W波段(75-105 GHz)，消耗2w。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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