C. Crespo-Cadenas, M. J. Madero-Ayora, Juan A. Becerra
{"title":"On the power level dependence of PA and DPD Volterra models","authors":"C. Crespo-Cadenas, M. J. Madero-Ayora, Juan A. Becerra","doi":"10.1109/PAWR46754.2020.9035998","DOIUrl":null,"url":null,"abstract":"This work presents a novel power amplifier behavioral model, referred to as power dependent Volterra (PDV) model, which is devoted to keep track on the average power of the input signal. The behavior of the parameters under varying power conditions is theoretically investigated using circuit-level knowledge including electrical and thermal subcircuits, and the dependence on average power is demonstrated. Experimental results employing a GaN HEMT power amplifier show that the model performance at $\\mathrm{P}_{\\mathrm{o}}=+33.8\\mathrm{dBm}$ is maintained over a range of about 15 dB.","PeriodicalId":356047,"journal":{"name":"2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PAWR46754.2020.9035998","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
This work presents a novel power amplifier behavioral model, referred to as power dependent Volterra (PDV) model, which is devoted to keep track on the average power of the input signal. The behavior of the parameters under varying power conditions is theoretically investigated using circuit-level knowledge including electrical and thermal subcircuits, and the dependence on average power is demonstrated. Experimental results employing a GaN HEMT power amplifier show that the model performance at $\mathrm{P}_{\mathrm{o}}=+33.8\mathrm{dBm}$ is maintained over a range of about 15 dB.