2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)最新文献

{"title":"Optimal Two-Way Hybrid Doherty-Outphasing Power Amplifier","authors":"Chenyu Liang, Thaimí Niubó-Alemán, Yunsik Hahn, P. Roblin, J. Reynoso‐Hernández","doi":"10.1109/PAWR46754.2020.9035992","DOIUrl":"https://doi.org/10.1109/PAWR46754.2020.9035992","url":null,"abstract":"This paper presents a two-way hybrid Doherty-outphasing power amplifier (HD-OPA) with an optimal efficiency. The HD-OPA consists of a main PA operating in class-F and an auxiliary PA operating in class-C which jointly operate in the Doherty mode at lower power and the outphasing mode at higher power. The peak to backoff fundamental drain voltage ratio of the auxiliary PA is optimized such that the main and auxiliary transistors both deliver their maximum power at peak power. As a result, the outphasing angles between the two inputs need to be changed dynamically with the dual-input power level. This concept is validated by a fabricated 2.08 GHz PA demonstrator circuit with a drain efficiency of 71.1 % at 8 dB backoff power and a drain efficiency of 74.6 % at 45.1 dBm peak power in continuous-wave measurements. When excited with a 20-MHz LTE signal with 9.55 dB peak-to-average-power-ratio, the HD-OPA yields an average efficiency of 56.7 %, average power-added-efficiency of 52.3 % and adjacent-channel-leakage-ratio of -49.0 dBc after linearization.","PeriodicalId":356047,"journal":{"name":"2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"1978 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128842589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Adaptive Input-Power Distribution in Doherty Power Amplifier using Modified Wilkinson Power Divider","authors":"Shuichi Sakata, Y. Komatsuzaki, S. Shinjo","doi":"10.1109/PAWR46754.2020.9036005","DOIUrl":"https://doi.org/10.1109/PAWR46754.2020.9036005","url":null,"abstract":"This paper presents the formulation and experimental validation of adaptive input-power distribution in Doherty Power Amplifiers (DPAs) using modified Wilkinson Power Divider (WPD). It will be theoretically shown that ideal power-dependent power-distribution profile for Doherty operation can be obtained by just adjusting the isolation resistor in the divider when input reflection phase of the auxiliary amplifier in power-back off range are properly set. The proposed circuit was experimentally verified by fabricating a 3.5 GHz 32 W DPA using GaN HEMT devices. Experiments showed that, by optimizing the isolation resistor, ACLR improvement of 9 dB were obtained under 8.5 dB PAPR 10 MHz LTE signal. The optimized DPA based on this technique showed an average drain efficiency of 55 % and ACLR of −50 dBc using the same signal after Digital Pre-Distortion (DPD).","PeriodicalId":356047,"journal":{"name":"2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124868976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Amplifier Input Matching for NF-Gain-Linearity Compromise","authors":"William Sear, Adam Der, T. Barton","doi":"10.1109/PAWR46754.2020.9035994","DOIUrl":"https://doi.org/10.1109/PAWR46754.2020.9035994","url":null,"abstract":"In this paper we investigate the effect of amplifier input matching on the noise figure, gain, and linearity design tradeoff, with the goal of developing a single-amplifier solution able to operate as either a PA or LNA. We evaluate the large-signal linearity performance of an amplifier with a noise-matched input compared to an identical amplifier with gain-matched input, and the effects on efficiency and noise figure. The prototype amplifier is designed at 3 GHz and realizes 42.86 dBm CW output power and 67% PAE at 3 dB gain compression. With a noise-matched input the amplifier realizes a 2 dB reduction in gain and 7.7 percentage point reduction in PAE compared to the gain-matched amplifier, but a 3 dB improvement in IMD3 at 33.5 dBm output power under a 1-MHz spaced two-tone signal excitation.","PeriodicalId":356047,"journal":{"name":"2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129454658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A 12 GHz to 46 GHz Fully Integrated SiGe Distributed Power Amplifier with 20.9 dBm Output Power and 18.3 dB Gain","authors":"Songhui Li, M. V. Thayyil, C. Carta, F. Ellinger","doi":"10.1109/PAWR46754.2020.9036002","DOIUrl":"https://doi.org/10.1109/PAWR46754.2020.9036002","url":null,"abstract":"This work presents a power amplifier (PA) operating from 12 GHz to 46 GHz implemented in a 130 nm- SiGe-BiCMOS technology. The circuit employs an improved distributed topology with stacked transistor gain cells and output termination with large resistance to simultaneously improve gain and output power. A transmission line is introduced to avoid the use of external bias-tee for the DC power supply. Measurements of the fabricated chips show a peak gain of 18.3 dB, a maximum saturated output power of 20.9dBm, a maximum 1-dB compressed output power of 19.2dBm and a peak power added efficiency of 14.5 %. To the best knowledge of the authors, the presented PA has the best combination of output power, power gain and power bandwidth among the reported broadband PAs in silicon based technologies.","PeriodicalId":356047,"journal":{"name":"2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129898658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"On the power level dependence of PA and DPD Volterra models","authors":"C. Crespo-Cadenas, M. J. Madero-Ayora, Juan A. Becerra","doi":"10.1109/PAWR46754.2020.9035998","DOIUrl":"https://doi.org/10.1109/PAWR46754.2020.9035998","url":null,"abstract":"This work presents a novel power amplifier behavioral model, referred to as power dependent Volterra (PDV) model, which is devoted to keep track on the average power of the input signal. The behavior of the parameters under varying power conditions is theoretically investigated using circuit-level knowledge including electrical and thermal subcircuits, and the dependence on average power is demonstrated. Experimental results employing a GaN HEMT power amplifier show that the model performance at $mathrm{P}_{mathrm{o}}=+33.8mathrm{dBm}$ is maintained over a range of about 15 dB.","PeriodicalId":356047,"journal":{"name":"2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128970655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Source/Load-Pull Characterisation of GaN on Si HEMTs with Data Analysis Targeting Doherty Design","authors":"R. Quaglia, A. Piacibello, F. Costanzo, R. Giofré, M. Casbon, R. Leblanc, V. Valenta, V. Camarchia","doi":"10.1109/PAWR46754.2020.9035999","DOIUrl":"https://doi.org/10.1109/PAWR46754.2020.9035999","url":null,"abstract":"This paper presents the source/load-pull characterisation of GaN HEMTs on Si substrate, with an analysis of the measurement data oriented to aid the design of Doherty power amplifiers for satellite communication applications in the 17–20 GHz band. In particular, fundamental load-pull, in both class AB and C, is used to identify the output power and efficiency contours and assess the scalability of the performance vs. device size. Second harmonic source/load-pull data is used to determine the harmonic impedance regions to avoid during matching network synthesis. The load-pull data allows to predict the optimum load modulation trajectory to be synthesised in the design phase and the associated performance in terms of efficiency, gain compression and phase distortion.","PeriodicalId":356047,"journal":{"name":"2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122459589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The thermal memory effect reduction of 5G base station power amplifier using multilevel pulse modulation","authors":"Tzu-Han Wang, Yu-Ting Lin, Shuo-Heng Xu, You-Huei Chen, Jau-Horng Chen","doi":"10.1109/PAWR46754.2020.9036007","DOIUrl":"https://doi.org/10.1109/PAWR46754.2020.9036007","url":null,"abstract":"This paper presents a study of thermal-memory effect reduction for multi-level pulse-modulated polar transmitters (PMPTs). PMPTs using single-level pulse modulation have shown to have minimal memory effects even when operated at high power levels. In this paper, thermal simulation with different levels of pulses was performed to study the effects of multi-level pulse modulation. Simulation results show that the multi-level pulse signal has the potential to reduce heat from base station power amplifier.","PeriodicalId":356047,"journal":{"name":"2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122666716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Determining a Digital Predistorter Model Structure for Wideband Power Amplifiers through Random Forest","authors":"Luis Álvarez-López, Juan A. Becerra, M. J. Madero-Ayora, C. Crespo-Cadenas","doi":"10.1109/PAWR46754.2020.9036004","DOIUrl":"https://doi.org/10.1109/PAWR46754.2020.9036004","url":null,"abstract":"This work presents the application of the Random Forest technique to behavioral modeling component selection. Several digital predistorters (DPDs) with a random structure are attained to obtain a sequence of the regressors importance with respect to their impact in the linearization error of a power amplifier (PA). The approach has been validated in the DPD of a commercial PA operating under a 5G-NR signal, showcasing the ability of the algorithm to sort and prune the components.","PeriodicalId":356047,"journal":{"name":"2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122271795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simulation Technique for Thermal Resistance in CMOS-SOI Power Amplifier Integrated Circuits","authors":"Sravya Alluri, J. Jayamon, B. Hanafi, P. Asbeck","doi":"10.1109/PAWR46754.2020.9035995","DOIUrl":"https://doi.org/10.1109/PAWR46754.2020.9035995","url":null,"abstract":"Thermal resistance is an important design parameter for high power ICs, particularly for power amplifiers. Although the buried oxide underneath FETs in CMOS ICs presents a barrier to heat flow, the interconnect metals and surrounding oxide provide additional paths for heat-sinking. This paper describes a straightforward technique to simulate the layout-dependent thermal resistance of a CMOS-SOI IC including the interconnect effects. The technique is an adaptation of the widely-used electromagnetic solver EMX by Integrand Software to heat flow. Simulation results show that in representative layouts the thermal resistance is reduced by a factor of 1.5x to 2x by the presence of interconnects. The benefit of vias through the buried oxide is highlighted.","PeriodicalId":356047,"journal":{"name":"2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"133 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133723869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"2020 IEEE Radio & Wireless Week","authors":"S. Erhardt, R. Weigel, A., Koelpin, K. Tanja, R. Gómez‐García, A. Hardy, C., Crump, J. Albrecht, Q. Fan, T. Grotjohn, J. Papapolymerou","doi":"10.1109/pawr46754.2020.9036006","DOIUrl":"https://doi.org/10.1109/pawr46754.2020.9036006","url":null,"abstract":"Efficiency and linearity are key features in every communication system. In a typical transmit-receive module, the PA consumes around 70% of the total energy and, being the last stage of the transmitter, it is the main responsible for the overall system linearity. However, efficiency and linearity are contrasting features, more still in applications that make use of spectrum-efficient digital modulation schemes, such as 5G systems or new high throughput satellites. The ability of the Doherty architecture of operating at high efficiency at significant output power back-off has led the RF and microwave community to re-discover the Doherty concept and adapt it to the requirements of modern high frequency transmitters both for terrestrial and space applications. Moreover, its implementation on GaN technology has the potentials to offer game-changing advantage. This workshop aims to present recent progress on integrated Doherty Amplifiers and all the aspects related to their implementation, covering state-of-the-art GaN technology, advanced experimental characterization techniques at device/ circuit level, as well as various Doherty HPA MMIC implementations. Talks and Speakers: Integrated Doherty Power Amplifiers: Challenges and Solutions Anna Piacibello, Vittorio Camarchia, Politecnico di Torino GaN Enabling Technologies Remy Leblanc, OMMIC Foundry Load Pull Characterisation Oriented to the Design of Doherty Power Amplifiers Roberto Quaglia, Cardiff University High Power Amplifications and Integration Challenges of Active Antennas for Satellite Communication Václav Valenta, European Space Agency Design of MMIC Doherty Amplifier: Standard vs. Stacked Architecture Ferdinando Costanzo, Rocco Giofrè, Paolo Colantonio, University of Roma Tor Vergata Design of MMIC Doherty Amplifier: Multi-Doherty Approach Anna Piacibello, Vittorio Camarchia, University of Roma Tor Vergata Linearity Assessment Techniques for GaN MMICs PAs: Simulations & Experimental Characterization Nuno Borges Carvalho, University of Aveiro Workshop Solid State Power Amplification for SpaceBorne Systems Room: Bonham C Workshop Advances in SiGe BiCMOS and RF-CMOS Frontend Technologies Room: Bonham D Workshop Machine Learning and Dimensionality Reduction Techniques for RF Components and Systems: from Modeling to Linearization Room: Bonham E Organizers: Tomas Gotthans, Brno University of Technology Genevieve Baudoin, Université Paris-Est, ESIEE Paris Abstract: This workshop will review critical technologies, design challenges and recent trends in the area of space-borne solid-state high power amplification. Well established solutions for traditional RF payloads will be discussed as well as advanced techniques applied to multibeam direct radiating antennas. Systems and solutions covering frequency bands up to mm-waves will be discussed, with particular focus on high-efficiency concepts, thermal management, which are of prime importance in spaceborne systems. Advanced GaN MMIC technologies and","PeriodicalId":356047,"journal":{"name":"2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)","volume":"575 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133929753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}