Electronic and optical properties of ZnO quantum well structures

H. C. Jeon, T. Kang, Seung Joo Lee, Seoung-Hwan Park
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Abstract

This study investigates optical properties as a function of internal and external fields in the quantum well (QW). Optical properties of CdZnO/MgZnO QW structures, considering various applied electric fields are evaluated by using many-body effects. The strain-induced piezoelectric polarization and the spontaneous polarization can be reduced effectively by applied electric field in CdZnO/ZnMgO quantum well (QW) structures with high Cd composition. That is, optical properties as a function of internal and external fields in the CdZnO/ZnMgO QW with various applied electric field result in the increased optical gain due to the fact that the QW potential profile is flattened as a result of the compensation of the internal field by the reverse field as confirmed by Stark shifts. These results demonstrate that a high-performance optical device operation can be realized in CdZnO/MgZnO QW structures by reducing the droop phenomenon.
ZnO量子阱结构的电子和光学性质
本研究研究了量子阱(QW)中作为内场和外场函数的光学性质。利用多体效应评价了不同外加电场条件下CdZnO/MgZnO QW结构的光学性能。在高Cd成分的CdZnO/ZnMgO量子阱(QW)结构中,外加电场可以有效地抑制应变致压电极化和自发极化。也就是说,在不同的外加电场作用下,CdZnO/ZnMgO量子阱的光学特性作为内外场的函数会导致光学增益的增加,这是由于Stark位移证实,由于反向场对内部场的补偿,量子阱的电位分布变得平坦。这些结果表明,通过减少下垂现象,可以在CdZnO/MgZnO QW结构中实现高性能的光学器件操作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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