19 SSE1 Solid-State Electronics and VLSI

Abstract

(B2H6) gases were used at the deposition pressure of 0.1 to 0.5 Torr. The tungsten catalyst temperature (Tfil) was varied from 1700 to 2100 ◦C. Sample transmittance measurement shows an optical-band gap (Egopt) variation from 1.45 to 2.1 eV. X-ray diffraction (XRD) spectra have revealed silicon microcrystalline phases for the samples prepared at the temperature greater than Tfil ̃ 1900 ◦C. For the used silicon oxide deposition conditions, no strong tungsten filament degradation was observed after a number of sample preparations.