E. Sánchez, Ben Chao, A. Ghaffari, A. Abrishamifar, Federico Sandoval
{"title":"19 SSE1 Solid-State Electronics and VLSI","authors":"E. Sánchez, Ben Chao, A. Ghaffari, A. Abrishamifar, Federico Sandoval","doi":"10.1109/iceee.2006.251838","DOIUrl":null,"url":null,"abstract":"(B2H6) gases were used at the deposition pressure of 0.1 to 0.5 Torr. The tungsten catalyst temperature (Tfil) was varied from 1700 to 2100 ◦C. Sample transmittance measurement shows an optical-band gap (Egopt) variation from 1.45 to 2.1 eV. X-ray diffraction (XRD) spectra have revealed silicon microcrystalline phases for the samples prepared at the temperature greater than Tfil ̃ 1900 ◦C. For the used silicon oxide deposition conditions, no strong tungsten filament degradation was observed after a number of sample preparations.","PeriodicalId":125310,"journal":{"name":"2006 3rd International Conference on Electrical and Electronics Engineering","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 3rd International Conference on Electrical and Electronics Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/iceee.2006.251838","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
(B2H6) gases were used at the deposition pressure of 0.1 to 0.5 Torr. The tungsten catalyst temperature (Tfil) was varied from 1700 to 2100 ◦C. Sample transmittance measurement shows an optical-band gap (Egopt) variation from 1.45 to 2.1 eV. X-ray diffraction (XRD) spectra have revealed silicon microcrystalline phases for the samples prepared at the temperature greater than Tfil ̃ 1900 ◦C. For the used silicon oxide deposition conditions, no strong tungsten filament degradation was observed after a number of sample preparations.