19 SSE1 Solid-State Electronics and VLSI

E. Sánchez, Ben Chao, A. Ghaffari, A. Abrishamifar, Federico Sandoval
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Abstract

(B2H6) gases were used at the deposition pressure of 0.1 to 0.5 Torr. The tungsten catalyst temperature (Tfil) was varied from 1700 to 2100 ◦C. Sample transmittance measurement shows an optical-band gap (Egopt) variation from 1.45 to 2.1 eV. X-ray diffraction (XRD) spectra have revealed silicon microcrystalline phases for the samples prepared at the temperature greater than Tfil ̃ 1900 ◦C. For the used silicon oxide deposition conditions, no strong tungsten filament degradation was observed after a number of sample preparations.
19 SSE1固态电子和VLSI
(B2H6)气体在0.1 ~ 0.5 Torr的沉积压力下使用。钨催化剂温度(Tfil)在1700 ~ 2100℃范围内变化。样品透射率测量显示,光带隙(Egopt)在1.45 ~ 2.1 eV之间变化。x射线衍射(XRD)谱图显示,在温度高于tfili 1900◦C时制备的样品具有硅微晶相。对于所采用的氧化硅沉积条件,经过多次样品制备,没有观察到钨丝的强烈降解。
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