A switched-capacitor mm-wave VCO in 65 nm digital CMOS

M. Nariman, R. Rofougaran, F. De Flaviis
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引用次数: 27

Abstract

A 34–40 GHz VCO fabricated in 65 nm digital CMOS technology is demonstrated in this paper. The VCO uses a combination of switched capacitors and varactors for tuning and has a maximum Kvco of 240 MHz/V. It exhibits a phase noise of better than −98 dBc/Hz @ 1-MHz offset across the band while consuming 12 mA from a 1.2-V supply, an FOMT of −182.1 dBc/Hz. A cascode buffer following the VCO consumes 11 mA to deliver 0 dBm LO signal to a 50Ω load.
65纳米数字CMOS开关电容毫米波压控振荡器
本文介绍了一种采用65nm数字CMOS技术制作的34 - 40ghz压控振荡器。VCO使用开关电容器和变容管的组合进行调谐,最大Kvco为240 MHz/V。它的相位噪声优于- 98 dBc/Hz @ 1-MHz,同时从1.2 v电源消耗12 mA, fmt为- 182.1 dBc/Hz。VCO后的级联码缓冲器消耗11ma将0 dBm的LO信号传递给50Ω负载。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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