Global planarization technique/CMP by high precision polishing and its characteristics

T. Karaki-Doy, Haedo Jeong, T. Nakagawa, H. Ohmori, T. Kasai
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引用次数: 5

Abstract

In this research we built a prototype of planarization polishing or so-called Chemical and Mechanical Polishing (CMP) using high precision mechanical processing techniques, and thereafter, gained an understanding of basic processing characteristics using model device wafers. As a result, notedly better characteristics such as planarity and uniformity than those obtained to date have been achieved and thus we have gained guidelines so as to implement those characteristics as part of the semiconductor manufacturing equipment.
高精度抛光全局平面化技术/CMP及其特点
在本研究中,我们利用高精度的机械加工技术建立了一个平面化抛光或所谓的化学和机械抛光(CMP)的原型,然后通过模型器件晶圆了解了基本的加工特性。因此,已经获得了比迄今为止获得的更好的特性,例如平面性和均匀性,因此我们已经获得了指导方针,以便将这些特性作为半导体制造设备的一部分实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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