Thermal Coefficient of Resistance of High-entropy Film Alloys

Abstract

In the paper presents the results of the study of the crystalline structure and electrophysical properties of film high-entropy film alloys based on Al, Cu, Ni, Fe, Co and Cr. It is established that in film samples, formed by the layer condensation of separate components, the fcc1 phase based on Cu is immediately formed (lattice parameter a = 0.360 - 0.365 nm) or this process can be two-step: first the phase composition corresponds to fcc1 and fcc2 (a = 0.402 - 0.405 nm), and then homogenizes into fcc1. The dimensional dependence of TCR versus total thickness of the multilayer in the initial state of the film system is obtained. On the basis of this dependence, for the first time in the practice of film HEA, the basic parameters of electric transport based on Fuchs-Sondheimer and Tellier-Tosser-Pichard models were determined.