{"title":"A Reference-Sampling PLL with Low-Ripple Double-Sampling PD Achieving −80-dBc Reference Spur and −259-dB FoM with 12-pF Input Load","authors":"Zunsong Yang, Masaru Osada, Shuowei Li, Yuyang Zhu, Tetsuya Iizuka","doi":"10.23919/VLSITechnologyandCir57934.2023.10185259","DOIUrl":null,"url":null,"abstract":"A reference-sampling PLL (RSPLL) with low-ripple double-sampling phase detector (DSPD) is proposed to lower the PD’s in-band phase noise (PN) by 3dB without raising PLL’s input load and crystal oscillator’s (XO’s) power consumption. A unity-gain buffer (UGB) based charger and a multiplexed dummy sampler are proposed to reduce PLL’s input load by a factor of 4 without compromising spur and jitter performances. With a 100-MHz input reference, the prototype in 65-nm CMOS achieves an RMS jitter of 63fs with a spur level of −80dBc. The total power consumption is 3.1mW at 3.4GHz.","PeriodicalId":317958,"journal":{"name":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185259","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A reference-sampling PLL (RSPLL) with low-ripple double-sampling phase detector (DSPD) is proposed to lower the PD’s in-band phase noise (PN) by 3dB without raising PLL’s input load and crystal oscillator’s (XO’s) power consumption. A unity-gain buffer (UGB) based charger and a multiplexed dummy sampler are proposed to reduce PLL’s input load by a factor of 4 without compromising spur and jitter performances. With a 100-MHz input reference, the prototype in 65-nm CMOS achieves an RMS jitter of 63fs with a spur level of −80dBc. The total power consumption is 3.1mW at 3.4GHz.