EFFECT OF THE PRESSURE ON THE PROPERTIES OF SCHOTTKY DIODE BASED ON OVERCOMPENSATE SEMICONDUCTOR

SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS Pub Date : 2021-04-30 DOI:10.37681/2181-1652-019-x-2021-2-4

S. Daliev, F. A. Saparov

引用次数: 0

Abstract

The effect of uniform compression on the properties of n-Si Schottky diode based on overcompensate semiconductor has been studied. It was shown that overcompensation is a result of structure defects generation in the thermo treatment of the starting silicon wafer

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压力对过补偿半导体肖特基二极管性能的影响

研究了均匀压缩对基于过补偿半导体的n-Si肖特基二极管性能的影响。结果表明，过补偿是由晶片热处理过程中产生的结构缺陷引起的

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SEMOCONDUCTOR PHYSICS AND MICROELECTRONICS

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