On the preferred orientation in Ti1 –xAlxN and Ti1–x–yAlxSiyN thin films

D. Rafaja, A. Poklad, G. Schreiber, V. Klemm, D. Heger, M. Šíma
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引用次数: 7

Abstract

Abstract The influence of the deposition geometry and the chemical composition on the form and degree of the preferred orientation of crystallites was investigated in TiN, Ti1–xAlxN, and Ti1–x–yAlxSiyN thin films deposited by cathodic arc evaporation. The deposition geometry was varied by changing the angle between the cathodes and the substrates. The chemical composition of the thin films was modified by the choice of the cathodic materials. In TiN thin films, the crystallites were preferentially oriented with the {111} direction perpendicular to the sample surface, independent of the deposition geometry. Besides, a well-pronounced in-plane texture was observed. Co-deposition of Ti, Al, and Si in nitrogen atmosphere stimulated inclination of the texture direction towards the sample surface, which can be described as a change of the texture direction related to the sample surface perpendicular direction, and reduced the amount of the in-plane texture in the coatings (the preferred orientation of crystalli...
Ti1 -xAlxN和Ti1 - x - yalxsiyn薄膜的择优取向
摘要:研究了阴极电弧蒸发法制备的TiN、Ti1-xAlxN和Ti1-x-yAlxSiyN薄膜中沉积几何形状和化学成分对晶粒择优取向形成和程度的影响。通过改变阴极与衬底之间的夹角,可以改变沉积的几何形状。通过阴极材料的选择,改变了薄膜的化学成分。在TiN薄膜中,晶体优先取向于与样品表面垂直的{111}方向,与沉积几何形状无关。此外,还观察到明显的面内纹理。Ti、Al和Si在氮气气氛中的共沉积刺激了织构方向向样品表面的倾斜,这可以描述为与样品表面垂直方向相关的织构方向的改变,并且减少了涂层中面内织构的数量(晶体的首选取向)。
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