Power Ga-As F.E.T. Characterization

Abstract

Microwave Ga-As F.E.T. characterization, starting from internal geometry is presented and extended to power F.E.T.A computer program, solving the transport equations for charge carriers in the channel versus biasing conditions and geometrical parameters, gives static characteristics and the equivalent circuit. Calculation of the saturation current and the breakdown voltage gives the maximum output power of the device together with the optimum load impedance. From these results, dependance of gain versus output power is derived. Comparisons between theoretical and experimental results are presented at 10 GHz.