Theoretical and Experimental Studies of Failure Mechanisms in Gallium Arsenide Three-Terminal Transferred Electron Devices

Abstract

A two-dimensional transient numerical study of failure mechanisms in gallium arsenide transferred electron devices was undertaken. The simulation, which incorporates the effects of elevated temperature operation, mobility and donor density variations was designed to assess these contributions on device operation and reliability. The results of the study are consistent with a previously proposed reliability model and are discussed below.