C. Elgaard, S. Andersson, Peter Caputa, E. Westesson, H. Sjöland
{"title":"A 27 GHz Adaptive Bias Variable Gain Power Amplifier and T/R Switch in 22nm FD-SOI CMOS for 5G Antenna Arrays","authors":"C. Elgaard, S. Andersson, Peter Caputa, E. Westesson, H. Sjöland","doi":"10.1109/rfic.2019.8701819","DOIUrl":null,"url":null,"abstract":"A 27 GHz fully integrated, variable gain, two stage Power Amplifier (PA) and a Transmit/Receive (T/R) switch targeting 5G antenna array systems are presented. The PA uses adaptive bias, tracking the input signal amplitude, which improves saturated output power (Psat) with 1.4 dB and 1 dB output compression (OP1dB) by 3 dB. For a supply voltage of 1.2 V, the PA reaches a Psat of 17.4 dBm and an OP1dB of 16.5 dBm, with a power added efficiency of 19.5 % and 17.3 %, respectively. The power gain can be controlled with 5-bits from 5.2 to 34 dB. The T/R-switch has an insertion loss of 1.63/1.46 dB in TX/RX mode, and for reliability reasons all switch devices are on in TX-mode. The complete PA and T/R-switch only occupies 0.146 mm2 in a 22 nm FD-SOI CMOS technology.","PeriodicalId":281385,"journal":{"name":"2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/rfic.2019.8701819","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
A 27 GHz fully integrated, variable gain, two stage Power Amplifier (PA) and a Transmit/Receive (T/R) switch targeting 5G antenna array systems are presented. The PA uses adaptive bias, tracking the input signal amplitude, which improves saturated output power (Psat) with 1.4 dB and 1 dB output compression (OP1dB) by 3 dB. For a supply voltage of 1.2 V, the PA reaches a Psat of 17.4 dBm and an OP1dB of 16.5 dBm, with a power added efficiency of 19.5 % and 17.3 %, respectively. The power gain can be controlled with 5-bits from 5.2 to 34 dB. The T/R-switch has an insertion loss of 1.63/1.46 dB in TX/RX mode, and for reliability reasons all switch devices are on in TX-mode. The complete PA and T/R-switch only occupies 0.146 mm2 in a 22 nm FD-SOI CMOS technology.