A 27 GHz Adaptive Bias Variable Gain Power Amplifier and T/R Switch in 22nm FD-SOI CMOS for 5G Antenna Arrays

C. Elgaard, S. Andersson, Peter Caputa, E. Westesson, H. Sjöland
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引用次数: 8

Abstract

A 27 GHz fully integrated, variable gain, two stage Power Amplifier (PA) and a Transmit/Receive (T/R) switch targeting 5G antenna array systems are presented. The PA uses adaptive bias, tracking the input signal amplitude, which improves saturated output power (Psat) with 1.4 dB and 1 dB output compression (OP1dB) by 3 dB. For a supply voltage of 1.2 V, the PA reaches a Psat of 17.4 dBm and an OP1dB of 16.5 dBm, with a power added efficiency of 19.5 % and 17.3 %, respectively. The power gain can be controlled with 5-bits from 5.2 to 34 dB. The T/R-switch has an insertion loss of 1.63/1.46 dB in TX/RX mode, and for reliability reasons all switch devices are on in TX-mode. The complete PA and T/R-switch only occupies 0.146 mm2 in a 22 nm FD-SOI CMOS technology.
一种用于5G天线阵列的22nm FD-SOI CMOS 27ghz自适应偏置变增益功率放大器和T/R开关
提出了一种针对5G天线阵列系统的27 GHz全集成、可变增益、两级功率放大器(PA)和收发(T/R)开关。该放大器采用自适应偏置,跟踪输入信号幅度,将饱和输出功率(Psat)提高1.4 dB,将1db输出压缩(OP1dB)提高3 dB。当电源电压为1.2 V时,放大器的Psat为17.4 dBm, OP1dB为16.5 dBm,功率增加效率分别为19.5%和17.3%。功率增益可以用5位控制,范围从5.2到34 dB。T/ r开关在TX/RX模式下的插入损耗为1.63/1.46 dB,出于可靠性原因,所有开关设备都在TX模式下打开。在22 nm FD-SOI CMOS技术中,完整的PA和T/ r开关仅占用0.146 mm2。
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