Insertion-Loss Optimization of Transformer-based Matching Networks for mm-Wave Applications

David Bierbuesse, R. Negra
{"title":"Insertion-Loss Optimization of Transformer-based Matching Networks for mm-Wave Applications","authors":"David Bierbuesse, R. Negra","doi":"10.1109/NORCHIP.2018.8573510","DOIUrl":null,"url":null,"abstract":"A new design methodology for insertion-loss (IL) optimization of transformer-based input matching networks is presented in this paper. With respect to a particular load impedance, the optimum transformer (TF) specifications, i.e. primary and secondary inductance $L_{p}$ and $L_{s}$ and the coupling factor $k$, can be determined. As a design example, this approach is presented for an integrated planar TF topology in a 65 nm CMOS process. It is verified by EM co-simulations in ADS Momentum at a centre frequency of 60 GHz.","PeriodicalId":152077,"journal":{"name":"2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)","volume":"15 5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NORCHIP.2018.8573510","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

A new design methodology for insertion-loss (IL) optimization of transformer-based input matching networks is presented in this paper. With respect to a particular load impedance, the optimum transformer (TF) specifications, i.e. primary and secondary inductance $L_{p}$ and $L_{s}$ and the coupling factor $k$, can be determined. As a design example, this approach is presented for an integrated planar TF topology in a 65 nm CMOS process. It is verified by EM co-simulations in ADS Momentum at a centre frequency of 60 GHz.
毫米波应用中基于变压器匹配网络的插入损耗优化
提出了一种新的变压器输入匹配网络插入损耗优化设计方法。对于特定负载阻抗,可以确定最佳变压器(TF)规格,即初级和次级电感$L_{p}$和$L_{s}$以及耦合因子$k$。作为设计实例,本文介绍了该方法在65nm CMOS工艺中的集成平面TF拓扑结构。在中心频率为60ghz的ADS动量下进行了EM联合仿真验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信