Higher-order shear mode FBAR using polarization-inverted layers of (1120) textured zno films

IEEE Ultrasonics Symposium, 2005. Pub Date : 2005-12-01 DOI:10.1109/ULTSYM.2005.1603224

M. Yoshinori, T. Yanagitani, M. Matsukawa, Y. Watanabe

引用次数: 0

Abstract

Second-order shear mode FBAR using (1120) textured ZnO film was fabricated. This FBAR contained two ZnO layers with opposite polarizations. Crystallites growth directions of the ZnO layers were clarified by X-ray pole figure analysis. Characteristics of this FBAR were experimentally and theoretically investigated. Keywords-component; Shear mode; Higher order mode FBAR; (1120) textured Zinc Oxide; Polarization-inverted piezoelectric layers

查看原文本刊更多论文

利用(1120)织构zno薄膜极化反转层的高阶剪切模式FBAR

采用(1120)织构ZnO薄膜制备了二阶剪切模式FBAR。该FBAR包含两个极性相反的ZnO层。通过x射线极图分析，明确了ZnO层的晶体生长方向。实验和理论研究了该FBAR的特性。Keywords-component;剪切模式;高阶模式FBAR;(1120)变形氧化锌;极化倒置压电层

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

IEEE Ultrasonics Symposium, 2005.

自引率

0.00%

发文量