Defect tolerance at the end of the roadmap

M. Mishra, S. Goldstein
{"title":"Defect tolerance at the end of the roadmap","authors":"M. Mishra, S. Goldstein","doi":"10.1109/TEST.2003.1271109","DOIUrl":null,"url":null,"abstract":"As feature sizes shrink closer to single digit nanometer dimensions, defect tolerance will become increasingly important. This is true whether the chips are manufactured using top-down methods, such as photolithography, or bottom-up assembly processes such as Chemically Assembled Electronic Nanotechnology (CAEN). In this chapter, we examine the consequences of this increased rate of defects, and describe a defect tolerance methodology centered around reconfigurable devices, a scalable testing method, and dynamic place-and-route. We summarize some of our own results in this area as well as those of others, and enumerate some future research directions required to make nanometer-scale computing a reality.","PeriodicalId":236182,"journal":{"name":"International Test Conference, 2003. Proceedings. ITC 2003.","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Test Conference, 2003. Proceedings. ITC 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TEST.2003.1271109","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

As feature sizes shrink closer to single digit nanometer dimensions, defect tolerance will become increasingly important. This is true whether the chips are manufactured using top-down methods, such as photolithography, or bottom-up assembly processes such as Chemically Assembled Electronic Nanotechnology (CAEN). In this chapter, we examine the consequences of this increased rate of defects, and describe a defect tolerance methodology centered around reconfigurable devices, a scalable testing method, and dynamic place-and-route. We summarize some of our own results in this area as well as those of others, and enumerate some future research directions required to make nanometer-scale computing a reality.
路线图末尾的缺陷容忍度
随着特征尺寸缩小到接近个位数纳米尺寸,缺陷容错将变得越来越重要。无论芯片是采用自上而下的方法(如光刻)制造,还是采用自下而上的组装工艺(如化学组装电子纳米技术(CAEN))制造,都是如此。在本章中,我们检查了这种增加的缺陷率的后果,并描述了一种以可重构设备为中心的缺陷容忍方法,一种可扩展的测试方法,以及动态的放置和路由。我们总结了我们在这一领域的一些成果以及其他人的成果,并列举了使纳米级计算成为现实所需的一些未来研究方向。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信