Technology Roadmapping for the GAA-FETs Based on the Methods of Patent Mining, Fuzzy Knapsack Problem, and Fuzzy Competence Set Expansion

Chi-Yo Huang, Ying-Ting Kuo, Liang-Chieh Wang, Yi-Hao Hsiao, C. Yang
{"title":"Technology Roadmapping for the GAA-FETs Based on the Methods of Patent Mining, Fuzzy Knapsack Problem, and Fuzzy Competence Set Expansion","authors":"Chi-Yo Huang, Ying-Ting Kuo, Liang-Chieh Wang, Yi-Hao Hsiao, C. Yang","doi":"10.1109/iFUZZY53132.2021.9605088","DOIUrl":null,"url":null,"abstract":"The Moore’s law has successfully predicted the trend of semiconductor-device shrinkage in the past five decades. As the fabrication techniques' advances, the shrinkage limitations maybe hit in the following decade(s). The Gate-All-Around Field-Effect Transistor (GAA-FET) is an important device which can extend the Moore’s law by overcoming technical deficiencies of the fabrication techniques as well as improve the device performance. From the aspect of patent landscaping, acquiring techniques of GAA-FET is very important for the development and provision of the next generation of technology for logic products. Albeit important, very few works discussed the patent analysis, landscaping, and roadmapping of techniques for GAA-FET. To cross the research gap, this work will propose a novel technology roadmapping framework based on the patent mining techniques as well as algorithms for solving the fuzzy knapsack and the fuzzy competence set expansion problems. At first, related U.S. patents will be retrieved. Then, an algorithm to resolve the Fuzzy Knapsack Problem (FKP) is used to select the most appropriate GAA-FET techniques to design around. After that, an algorithm for the fuzzy competence set expansion is adopted to design a minimum spanning tree (MST). The MST can serve as the basis for developing a technology roadmap for developing GAA-FET techniques for late coming semiconductor foundries. The empirical study derived a patent portfolio consisting of 12 techniques related to the GAA-FET. The derived patent portfolio as well as the MST can serve as the basis for defining design-around strategies and technology roadmaps by fast catching-up semiconductor foundries.","PeriodicalId":442344,"journal":{"name":"2021 International Conference on Fuzzy Theory and Its Applications (iFUZZY)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference on Fuzzy Theory and Its Applications (iFUZZY)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/iFUZZY53132.2021.9605088","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The Moore’s law has successfully predicted the trend of semiconductor-device shrinkage in the past five decades. As the fabrication techniques' advances, the shrinkage limitations maybe hit in the following decade(s). The Gate-All-Around Field-Effect Transistor (GAA-FET) is an important device which can extend the Moore’s law by overcoming technical deficiencies of the fabrication techniques as well as improve the device performance. From the aspect of patent landscaping, acquiring techniques of GAA-FET is very important for the development and provision of the next generation of technology for logic products. Albeit important, very few works discussed the patent analysis, landscaping, and roadmapping of techniques for GAA-FET. To cross the research gap, this work will propose a novel technology roadmapping framework based on the patent mining techniques as well as algorithms for solving the fuzzy knapsack and the fuzzy competence set expansion problems. At first, related U.S. patents will be retrieved. Then, an algorithm to resolve the Fuzzy Knapsack Problem (FKP) is used to select the most appropriate GAA-FET techniques to design around. After that, an algorithm for the fuzzy competence set expansion is adopted to design a minimum spanning tree (MST). The MST can serve as the basis for developing a technology roadmap for developing GAA-FET techniques for late coming semiconductor foundries. The empirical study derived a patent portfolio consisting of 12 techniques related to the GAA-FET. The derived patent portfolio as well as the MST can serve as the basis for defining design-around strategies and technology roadmaps by fast catching-up semiconductor foundries.
基于专利挖掘、模糊背包问题和模糊能力集展开方法的gaa - fet技术路线图
在过去的50年里,摩尔定律成功地预测了半导体器件的收缩趋势。随着制造技术的进步,收缩限制可能在未来十年内达到。栅极全能场效应晶体管(GAA-FET)是一种重要的器件,它可以克服制造工艺的技术缺陷,扩展摩尔定律,提高器件性能。从专利规划的角度来看,获得GAA-FET技术对于开发和提供下一代逻辑产品技术具有重要意义。虽然重要,但很少有作品讨论了GAA-FET技术的专利分析,景观和路线图。为了弥补研究空白,本工作将提出一种基于专利挖掘技术的新技术道路地图框架以及解决模糊背包和模糊能力集展开问题的算法。首先,将检索相关的美国专利。然后,利用模糊背包问题(FKP)算法选择最合适的GAA-FET技术进行设计。然后采用模糊能力集展开算法设计最小生成树(MST)。MST可以作为开发GAA-FET技术的技术路线图的基础,用于后期的半导体代工厂。实证研究得出了一个由12项与GAA-FET相关的技术组成的专利组合。衍生的专利组合以及MST可以作为快速追赶的半导体代工厂定义设计策略和技术路线图的基础。
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