Y. Dekhtyar, L. Avotina, Gennady Enichek, M. Romanova, B. Schmidt, E. Shulzinger, Hermanis Sorokins, A. Vilken, A. Zaslavski
{"title":"Interface of Silicon Nitride Nanolayers with Oxygen Deficiency","authors":"Y. Dekhtyar, L. Avotina, Gennady Enichek, M. Romanova, B. Schmidt, E. Shulzinger, Hermanis Sorokins, A. Vilken, A. Zaslavski","doi":"10.1109/BEC.2018.8600964","DOIUrl":null,"url":null,"abstract":"Multilayer Si<inf>3</inf>N<inf>4</inf> consisting of Si<inf>3</inf>N<inf>4</inf> nanolayers with the total thickness 60 nm was deposited layer-by-layer in a low-pressure chemical vapor deposition process. Compared with the single-layer Si<inf>3</inf>N<inf>4</inf>, the multilayer Si<inf>3</inf>N<inf>4</inf> had one-third less oxygen concentration at the interfaces. This decreased density of electrically active centers of oxygen traps and improved quality of nanocapacitors with multilayer Si<inf>3</inf>N<inf>4</inf> dielectric.","PeriodicalId":140384,"journal":{"name":"2018 16th Biennial Baltic Electronics Conference (BEC)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 16th Biennial Baltic Electronics Conference (BEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BEC.2018.8600964","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Multilayer Si3N4 consisting of Si3N4 nanolayers with the total thickness 60 nm was deposited layer-by-layer in a low-pressure chemical vapor deposition process. Compared with the single-layer Si3N4, the multilayer Si3N4 had one-third less oxygen concentration at the interfaces. This decreased density of electrically active centers of oxygen traps and improved quality of nanocapacitors with multilayer Si3N4 dielectric.
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