Operation of IGBTs at low temperatures

[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs Pub Date : 1991-04-22 DOI:10.1109/ISPSD.1991.146105

T. Chow, K. So, D. Lau

引用次数: 6

Abstract

The static and dynamic performance of 600 V, n- and p-channel, vertical insulated-gate bipolar transistors (IGBTs) at temperatures as low as 77 K has been measured and analyzed. Both types of IGBTs demonstrate a better performance at low temperatures in turn-off times and maximum gate controllable current, at the expense of a slightly higher forward drop.<>

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低温下igbt的运行

对600 V、n和p通道垂直绝缘栅双极晶体管(igbt)在低至77 K温度下的静态和动态性能进行了测量和分析。两种类型的igbt在低温关断时间和最大栅极可控电流下表现出更好的性能，但代价是略高的正向压降。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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