Multiple Through‐wafer Interconnects for MEMS Applications

M. Heschel, J. Kuhmann, S. Bouwstra
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Abstract

This chapter reports on the design and manufacturing of multiple through-wafer interconnects for stacking of microelectromechanical devices. The feedthroughs have been applied to an interconnect (intermediate) layer for an integrated microphone. The integrated microphone consists of the transducer part and an application specific integrated circuit (ASIC). The two parts are joined by stacking them on top of each other with the interconnect (intermediate) layer between them. The intermediate layer is a multifunctional layer. It provides the microphone with an acoustic frontchamber. The intermediate layer ensures the interchange of acoustical and electrical signals with the environment. Also, the intermediate layer protects the microphone during dicing, chip handling and in operation. The two active components are electrically connected through the intermediate layer by multiple wafer frontside to backside interconnects. The feedthrough interconnects are provided with under bump metallizations (UBM), solder bumps and sealing rings on the microphone side and top surface metallizations (TSM) on the ASIC side. The entire metallization system is based on electroplating techniques. The patterning of the metallizations has been done utilizing an electrodepositable photoresist (EDPR) as a plating mold. Several EDPR processes have been developed which are optimized for the respective metallization. The feedthrough interconnects have been optimized in terms of series resistance and parallel capacitance. Electrical characterization of the feedthrough interconnects has been carried out analytically and experimentally. The series resistance of one single interconnect wire is in the order of 100 mΩ. The parallel (parasitic) capacitance is in the order of 2 pF. Coupling between two adjacent feedthrough interconnects is negligible for low relative humidity ( 90%) the impedance between two wires may be reduced due to a condensed water film. Sensitivity measurements performed before and after bonding of the interconnect layer to the microphone showed identical results which proves sufficient (TΩ) isolation between the feedthrough wires.
用于MEMS应用的多通圆互连
本章报告了用于微机电器件堆叠的多个通晶圆互连的设计和制造。该馈通已应用于集成麦克风的互连(中间)层。集成麦克风由传感器部分和专用集成电路(ASIC)组成。这两个部分通过在它们之间的互连层(中间层)相互堆叠而连接在一起。中间层是一个多功能层。它为麦克风提供了一个声学前室。中间层保证了声学和电信号与环境的交换。同时,中间层在切割、芯片处理和操作过程中保护麦克风。两个有源元件通过多个晶圆正面到背面互连通过中间层电连接。馈通互连在麦克风侧采用凸点下金属化(UBM)、焊料凸点和密封环,在ASIC侧采用上表面金属化(TSM)。整个金属化系统是基于电镀技术。金属化的图案化是利用电沉积光刻胶(EDPR)作为电镀模具完成的。已经开发了几种EDPR工艺,并针对各自的金属化进行了优化。在串联电阻和并联电容方面对馈通互连进行了优化。对馈通互连的电特性进行了分析和实验。单根互连线串联电阻约为100 mΩ数量级。并联(寄生)电容约为2pf。在相对湿度较低(90%)的情况下,两根相邻馈通互连之间的耦合可以忽略不计,两根导线之间的阻抗可以由于冷凝水膜而降低。在将互连层连接到麦克风之前和之后进行的灵敏度测量显示出相同的结果,这证明了馈线之间有足够的隔离(TΩ)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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