The de Haas-van Alphen Effect in a Silicon Nanosandwich at the Room Temperature. Numerical Simulation of the Oscillations with Integer Filling Factors

Abstract

We present a study of the high-temperature de Haas - van Alphen effect in a silicon nanostructure with integer filling factors up to ν = 11, inclusively. It is shown that the observed oscillations can be described by the model of the Gaussian broadening of the Landau levels of the twodimensional density of states and an energy-independent basis. The estimation of the magnitude of the carriers effective mass appears to be 10-4 free electron mass.