{"title":"Assessment of the merits of CMOS technology scaling for analog circuit design","authors":"M. Vertregt, P. Scholtens","doi":"10.1109/ESSCIR.2004.1356615","DOIUrl":null,"url":null,"abstract":"Key device parameters such as drain current, transconductance, current factor, capacitance, etc. are linked to typical analog circuit level performance criteria, as a function of the CMOS technology node. Subsequently, speed and power implications for an analog-to-digital converter building block are estimated. Significant power efficiency improvements are predicted as a result of scaling to deep sub-micron technology nodes.","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2004.1356615","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18
Abstract
Key device parameters such as drain current, transconductance, current factor, capacitance, etc. are linked to typical analog circuit level performance criteria, as a function of the CMOS technology node. Subsequently, speed and power implications for an analog-to-digital converter building block are estimated. Significant power efficiency improvements are predicted as a result of scaling to deep sub-micron technology nodes.