Assessment of the merits of CMOS technology scaling for analog circuit design

M. Vertregt, P. Scholtens
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引用次数: 18

Abstract

Key device parameters such as drain current, transconductance, current factor, capacitance, etc. are linked to typical analog circuit level performance criteria, as a function of the CMOS technology node. Subsequently, speed and power implications for an analog-to-digital converter building block are estimated. Significant power efficiency improvements are predicted as a result of scaling to deep sub-micron technology nodes.
CMOS技术在模拟电路设计中的优点评估
漏极电流、跨导、电流因数、电容等关键器件参数作为CMOS技术节点的功能,与典型模拟电路级性能标准相关联。随后,对模数转换器构建块的速度和功率影响进行了估计。由于扩展到深亚微米技术节点,预计显著的功率效率将得到改善。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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