Semi-empirical aging model development via accelerated aging test

Engin Afacan, Günhan Dündar, A. E. Pusane, I. F. Baskaya
{"title":"Semi-empirical aging model development via accelerated aging test","authors":"Engin Afacan, Günhan Dündar, A. E. Pusane, I. F. Baskaya","doi":"10.1109/SMACD.2016.7520720","DOIUrl":null,"url":null,"abstract":"Modelling of the degradation mechanisms has a crucial role during the aging analysis, which determines the accuracy of the lifetime estimation. Conventionally, analytical and semi-empirical models are utilized during the aging analysis. Analytical models employ deterministic equations during the degradation calculation and they can be scaled for different technology nodes; hence providing flexibility. However, scaling errors and approximations during the model development may degrade the accuracy. On the other hand, semi-empirical models are generated via accelerated aging test (AAT) performed on the silicon, which often promise more reliable results for a given technology. This paper comprehensively examines the semi-empirical modelling process from test chip design to AAT experiments.","PeriodicalId":441203,"journal":{"name":"2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMACD.2016.7520720","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

Modelling of the degradation mechanisms has a crucial role during the aging analysis, which determines the accuracy of the lifetime estimation. Conventionally, analytical and semi-empirical models are utilized during the aging analysis. Analytical models employ deterministic equations during the degradation calculation and they can be scaled for different technology nodes; hence providing flexibility. However, scaling errors and approximations during the model development may degrade the accuracy. On the other hand, semi-empirical models are generated via accelerated aging test (AAT) performed on the silicon, which often promise more reliable results for a given technology. This paper comprehensively examines the semi-empirical modelling process from test chip design to AAT experiments.
通过加速老化试验建立半经验老化模型
老化机理的建模在老化分析中起着至关重要的作用,它决定了寿命估计的准确性。在进行老化分析时,通常采用分析模型和半经验模型。解析模型在退化计算过程中采用确定性方程,可以根据不同的技术节点进行缩放;因此提供了灵活性。然而,模型开发过程中的比例误差和近似值可能会降低模型的精度。另一方面,半经验模型是通过对硅进行加速老化试验(AAT)产生的,对于给定的技术,这通常承诺更可靠的结果。本文全面考察了从测试芯片设计到AAT实验的半经验建模过程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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