H. Tsai, H. Miyazoe, Josephine B. Chang, J. Pitera, Chi-Chun Liu, M. Brink, I. Lauer, Joy Y. Cheng, S. Engelmann, J. Rozen, J. Bucchignano, D. Klaus, S. Dawes, L. Gignac, C. Breslin, E. Joseph, D. Sanders, M. Colburn, M. Guillorn
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引用次数: 2
Abstract
In this work, we report electrical characterization FinFET devices with 29nm-pitch fins patterned using a technique called tone inverted grapho-epitaxy (TIGER). We use a topographic template to direct the self-assembly of block copolymers (BCP) to form small area gratings that are self-aligned to the template. After a tone-inversion operation, blocks of defect free SOI fins bounded by self-aligned exclude regions are formed with the spacing determined by the template line width (LW). This self-aligned customization enables further definition of the active region for FinFETs. Process window and design implications for directed self-assembly (DSA) with TIGER are also discussed.
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