{"title":"Periodic steady-state analysis for coupled device and circuit simulation","authors":"Yutao Hu, K. Mayaram","doi":"10.1109/SISPAD.2000.871215","DOIUrl":null,"url":null,"abstract":"A time-domain shooting method based coupled device and circuit simulator suitable for accurate simulation of RF circuits is presented. The simulator supports accurate numerical models for diodes, BJTs, and MOSFETs. These combined with the accelerated steady-state method allow accurate and efficient steady-state simulation of RF circuits.","PeriodicalId":132609,"journal":{"name":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2000.871215","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
A time-domain shooting method based coupled device and circuit simulator suitable for accurate simulation of RF circuits is presented. The simulator supports accurate numerical models for diodes, BJTs, and MOSFETs. These combined with the accelerated steady-state method allow accurate and efficient steady-state simulation of RF circuits.