A 10ppm/°C 1.8V piecewise curvature-corrected bandgap reference in 0.5µm CMOS

Jinghu Li, Xing-bao Zhang, Ming-yan Yu, Liang Han
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引用次数: 7

Abstract

A piecewise curvature-corrected bandgap reference (BGR) is presented. It features in utilizing a piecewise curvature-corrected current generator and an operational amplifier biased by a current proportional to absolute temperature (PTAT) to a conventional first order BGR. The piecewise current corrects the nonlinear temperature term of the first-order BGR in the higher temperature range (TR). The PTAT biased current compensates the trans-conductance degradation of the operational amplifier with temperature. Measured result shows that the proposed BGR achieves temperature coefficient of 10ppm/°C in the TR of 10–125°C, line regulation of 1.8mV/V in the supply range of 1.7–4.0V, power supply rejection(PSR) of −48dB. It is fabricated in CSMC0.5µm mixed signal CMOS process with chip area of 400×300µm and power consumption of 48µW.
一个10ppm/°C 1.8V分段曲率校正带隙参考在0.5µm CMOS
提出了一种分段曲率校正带隙基准(BGR)。它的特点是利用分段曲率校正电流发生器和一个运算放大器,其偏置电流与绝对温度(PTAT)成比例,与传统的一阶BGR相匹配。分段电流在较高温度范围内修正了一阶BGR的非线性温度项。PTAT偏置电流补偿运算放大器随温度的跨导退化。实测结果表明,所提出的BGR在TR为10 ~ 125℃时温度系数为10ppm/℃,在供电范围为1.7 ~ 4.0V时线路稳压为1.8mV/V,电源抑制(PSR)为−48dB。采用CSMC0.5µm混合信号CMOS工艺制作,芯片面积400×300µm,功耗48µW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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