The influence of higher minima on physical parameters in ultra heavily doped n-type GaAs

Abstract

In this paper was calculated the position of Fermi energy level and effective mass of electron in n-type GaAs as a function of donor concentrations in the range from 10/sup 17/ to 10/sup 21/ cm/sup -3/, taking into account upper minima in conduction band at 300 K. Calculations show that is necessary taken besides /spl Gamma/ and L minimum for concentrations greater than 10/sup 19/ cm/sup -3/ and all three minima (/spl Gamma/, L and X) for concentrations greater than 10/sup 20/ cm/sup -3/.