Research on the phase of an inline coupling RF MEMS power sensor

Zhiqiang Zhang, X. Liao
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引用次数: 2

Abstract

This paper presents the research on the phase of an inline coupling RF MEMS power sensor based on the microwave lumped network theory. The principle of the power sensor accomplished with GaAs MMIC process is to measure a certain percentage of the RF signal power coupled from a CPW line by a MEMS membrane. In the method, a phase shift of the RF signal is introduced by the MEMS membrane during the power detection, which affects the phase characteristic of the incident RF signal. In this paper, the lumped phase model of the inline power sensor is given and verified by measured results. Using this model, the effects of the height and the width of the MEMS membrane on the phase of the power sensor are studied. A good linearity of the output response at X-band and a sensitivity of about 52.6 µV·mW−1 at 12 GHz are obtained under the normal ambient temperature. Experiments show that the inline power sensor with the MEMS membrane 100 µm and 147 µm in width respectively has resulted in the average phase changes of about 14% and 33% at X-band compared with that 50 µm in width above the same CPW line.
一种内联耦合射频MEMS功率传感器的相位研究
基于微波集总网络理论,研究了一种内联耦合射频MEMS功率传感器的相位问题。利用GaAs MMIC工艺完成的功率传感器的原理是测量一定百分比的由MEMS膜从CPW线耦合而来的射频信号功率。该方法通过MEMS膜在功率检测过程中引入射频信号的相移,影响入射射频信号的相位特性。本文给出了内联功率传感器的集总相位模型,并通过实测结果进行了验证。利用该模型,研究了MEMS膜的高度和宽度对功率传感器相位的影响。在正常环境温度下,输出响应在x波段具有良好的线性,在12 GHz时灵敏度约为52.6µV·mW−1。实验表明,MEMS膜宽度分别为100µm和147µm的在线功率传感器在x波段的平均相位变化约为14%和33%,而在相同的CPW线上宽度为50µm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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