{"title":"A low variation GHz ring oscillator with addition-based current source","authors":"Xuan Zhang, A. Apsel","doi":"10.1109/ESSCIRC.2009.5325968","DOIUrl":null,"url":null,"abstract":"A 3-stage current-starved ring oscillator with 65.1% reduction in process variation in a 90nm CMOS process is presented. The low variation is achieved without degrading the mean operating frequency through the implementation of an addition-based current source to replace a single transistor current source in each inverter stage. No post-fabrication trimming or calibration is required. Circuit simulations indicate that the proposed circuitry is well suited for scaling beyond 90nm. Measurements that are taken from 2 separate wafers and 167 test chips show 65.1% less process variation in output frequency, compared to a conventional current-starved ring oscillator. The power overhead for the additional circuitry is 33µW.","PeriodicalId":258889,"journal":{"name":"2009 Proceedings of ESSCIRC","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Proceedings of ESSCIRC","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2009.5325968","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20
Abstract
A 3-stage current-starved ring oscillator with 65.1% reduction in process variation in a 90nm CMOS process is presented. The low variation is achieved without degrading the mean operating frequency through the implementation of an addition-based current source to replace a single transistor current source in each inverter stage. No post-fabrication trimming or calibration is required. Circuit simulations indicate that the proposed circuitry is well suited for scaling beyond 90nm. Measurements that are taken from 2 separate wafers and 167 test chips show 65.1% less process variation in output frequency, compared to a conventional current-starved ring oscillator. The power overhead for the additional circuitry is 33µW.