Power-gating-aware high-level synthesis

Eunjoo Choi, Changsik Shin, Taewhan Kim, Youngsoo Shin
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引用次数: 19

Abstract

A problem inherent in designing power-gated circuits is the overhead of the state-retention storage required to preserve the circuit state in standby mode. Reducing the amount of retention storage is known to be the most influential factor in minimizing the loss of the benefit (i.e. power saving) by power-gating. In this paper, we address a new problem of high-level synthesis with the objective of minimizing the size of retention storage to be used in the power-gated circuits. Specifically, we propose a complete design framework, called HLS-pg, that starts from the power-gating-aware scheduling, allocation, and controller synthesis down to the final circuit layout. The key contribution of the work is to solve the power-gating-aware scheduling problem, namely, scheduling operations that minimizes the number of retention registers required at the power-gating control step, while satisfying resource and latency constraints. In experiments on benchmark designs implemented in 65-nm CMOS technology, HLS-pg generates circuits with 27% less leakage current, with 6% less circuit area and wirelength, compared to the power-gated circuits produced by conventional high-level synthesis.
功率门控高级合成
设计电源门控电路的一个固有问题是在待机模式下保持电路状态所需的状态保持存储器的开销。减少保留存储器的数量被认为是最大限度地减少功率门控带来的好处损失(即节省电力)的最重要因素。在本文中,我们解决了一个新的高层次合成问题,其目标是最小化功率门控电路中使用的保留存储器的大小。具体来说,我们提出了一个完整的设计框架,称为HLS-pg,从功率门控感知调度,分配和控制器合成开始,直到最终的电路布局。该工作的关键贡献是解决了功率门控感知调度问题,即调度操作,在满足资源和延迟约束的情况下,最小化功率门控控制步骤所需的保留寄存器数量。在基于65纳米CMOS技术的基准设计实验中,与传统高水平合成的功率门控电路相比,HLS-pg产生的电路泄漏电流减少27%,电路面积和波长减少6%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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