3M Immobilized Micro-Bed Ion Exchange Resin Bed Technology Treatment of PGMEA

Garry Wang, M. Entezarian, Bob Gieger, Dean Wu
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Abstract

The ever-increasing demand for reducing metal content in fluids used for producing advanced nodes in semiconductor industries for either logic or memory devices require new approaches. The standard method of treatment using ion exchange columns [1] are kinetically limited to low ppb while the industry is striving for low ppt that is 1000 times higher reduction. PGMEA is a major solvent for dissolving photosensitive polymers and needs to be free of any ionic metals that could potentially interfere with photolithographic process, diffuse into functional components of the circuit and reduce performance, yield, or device life. In this study, PGMEA with the grade of SEMI G2 was obtained and processed with 3M™ Metal Ion Purifier Immobilized Ion Exchange Resin Monolith technology. One ion exchange chemistry was based on strong acid while the other was based on amino acid chemistry. Twenty metals were measured before and after processing through the immobilized monolith resin structure. Significant reduction in metal content was observed by reducing even the light elements such as sodium and potassium. The process conditions and reduction of each element by both ion exchange chemistries will be discussed.
3M固定化微床离子交换树脂床技术处理PGMEA
在半导体工业中,用于生产逻辑或存储设备的先进节点的流体中,对降低金属含量的需求不断增加,需要新的方法。使用离子交换柱的标准处理方法[1]在动力学上被限制在低ppb,而工业界正在努力实现比还原高1000倍的低ppt。PGMEA是溶解光敏聚合物的主要溶剂,需要不含任何离子金属,这些离子金属可能会干扰光刻工艺,扩散到电路的功能组件中,降低性能、产量或设备寿命。本研究采用3M™金属离子净化器固定化离子交换树脂整体技术制备了SEMI G2级的PGMEA。一种离子交换化学是基于强酸,另一种是基于氨基酸化学。采用固定化整体树脂结构对20种金属进行了加工前后的测量。通过减少钠和钾等轻元素,观察到金属含量显著减少。将讨论两种离子交换化学反应的过程条件和每种元素的还原。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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